Study On Effects Of Protons And Electrons Irradiation On Double Junction Amorphous Thin Film Silicon Solar Cell

This paper investigates the degradation in electrical property of double-junction amorphous silicon solar cells under the low energy protons, electrons respectively and protons electrons co-irradiation. The damage effect of different irradiation types to the inner structure and property of cell materials is explained. First, the cells with different numbers were irradiated with 80keV and 170keV protons respectively on the basis of ground-based simulation for space proton and electron co-irradiation. And then, 170keV electrons were used for the electrons irradiation on the amorphous silicon solar cells. At last, simulation experiments of proton and electron co-irradiation at 170keV were done. By the test and measure of I-V characteristics, reflectivity, series resistance, capacity, conductivity, performance degradation and damage mechanism of amorphous silicon solar cells were investigated.The irradiations testing show that, in comparison with 170keV protons irradiation, the degradation of the electric properties of the amorphous silicon solar cells irradiated by 80keV protons is more serious. The damage degree of double-junction amorphous silicon solar cells is decided by the damage of bottom junction. When the electrons energy is decided, the damage degree increases by the electrons irradiation with the increase of the fluence. The damage by co-irradiation is not equal to the addition of the damage of the protons irradiation and electrons irradiation independently. The changes of reflectivity and series resistance make the degradation of Isc and Pmax. The changes of capacity, conductivity influence the Isc. The damage by co-irradiation is due to the coeffects of ionization effect of radiation and displacement damage.