Research On Energetic Particle Irradiation Effect On Monocrystalline Silicon Wafer And Solar Cell By PCR And LIC

The development of aerospace technology and other high technology using silicon will face space radiation environment in the next decade.Space solar cell will be in space radiation environment as the main energy supply system in space environment.The performance and efficiency of the silicon devices will be reduced by energetic particles.Therefore,it is important to look for accurate,nondestructive and efficient diagnosis techniques to evaluate the performance of the irradiation solar cells and wafer.Radiation hardness of the silicon PV technology is not well understood,and potentially need to be evaluated and improved.Laser-induced photocarrier radiometry(PCR)is a non-contact,nondestructive,and high resolution NDT method to evaluate the performance of semiconductors devices.In this project,PCR is used to evaluate the performance of monocrystalline silicon(c-Si)solar cells and silicon wafer.First,two-layer and three-layer theoretical model is developed for the characterization of the electronic transport properties(lifetime τ,diffusion coefficient D,and surface recombination velocity s)with energetic particle irradiation on solar cells and wafer using noncontact PCR.Monte Carlo(MC)simulation is carried out to obtain the depth profiles of the proton irradiation layer at different low-energies(<200KeV).Second,Sentaurus TCAD software is employed to study the valuable insight into the physical mechanisms of solar cell performance including the solar radiation incident on the cell.To study the solar cell basic physical mechanisms and irradiated solar cell performance degradation dark and illuminated I-V curve is obtained.Third,Using PCR method the monocrystalline silicon(c-Si)solar cells are investigated under different low-energy proton irradiation,and the carrier transport parameters of the twolayer and three-layer are obtained by best-fitting of the experimental results.Finally,lock-in carrierography(LIC)imaging a fast non-destructive solar cell diagnostic method is employed to obtain the electrical parameters of the c-Si solar cell.The open circuit voltage(Voc),Local dark saturation current density(J0)and series resistance(Rs)spatially resolved image is obtained using LIC method.