| Ag(Nb,Ta)O3 was researched as a kind of capacitor in the high frequency. It was difficult to prepare the samples as traditional measures, and the dielectric permitivities can not meet the need of practicality. In the study, we prepared the ANT with traditional solid-state reaction method, and modified the process. We modified the dielectronic and sintering properties by doping the crystal seeds , additives and so on. And we characterized the ANT by XED, SEM and EDS. The reason of the experiment results were illustrated.The ANT doped with seeds were more dense, and the grain size was uniform the shape regular. The dielectrinic permitivity doped with the seed before the presintering was better than ones after the presintering. The results showed that the samples have the best dielectric properties when sintered at 1100℃:ε=476,tanδ=0.00470. The permittivity of the ANT samples doped with MnNb2O6 firstly increased and then decreased with the sintering temperature, while the dielectric loss decreased first, and then increased slightly. 1100oC seems to be the most proper sintering temperature for most of the samples. When the amount of MnNb2O6 is about 3 mol%, the samples have the best dielectric properties, larger permittivity and smaller dielectric loss:ε=474,tanδ=0.00307. The additives Bi2O3 and Sb2O3 can promote ANT properties in a large extent, they can improve the permitivity , reduce the dielectronic loss and make the temperature coeffcient of permitivity near zero. We try to perpare the samples with different proportion of doping. Bi2O3 affected the samples more obviously in contract. The samples doped with Bi2O3 have better properties. The results indicated that the samples doped with 3wt% amount of Bi2O3 and sintered at 1100oC have the best dielectric properties:ε=672.51, tanδ=7.3*10-4.
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