Study Of The Optical And Electrical Characteristics Of Aluminum-doped ZnO Thin Films Prepared By Electronic Beam Evaporation

AZO(aluminums zinc oxide films) which have many characteristics such as high ratio of performance to price and innoxious are the replacer of ITO(indium tin oxide films).AZO is deposited by electronic beam evaporation on the K9 substrates. Through the orthogonal experiment, the influence of technical conditions such as temperature of substrate, deposition rate, film thickness and impure quantity on optical and electrical property of AZO are studied. The resistance of the films has been measured by the method of four feet probe. Transmission has been characterized respectively by spectrophotometer. The structure feature has been measured by XRD. We obtain the optimum technique for AZO which is deposited by electronic beam evaporation. It is namely that the substrate temperature is about 250℃,the deposit rate must be slower than 10 A/S and the film thickness must be selected according to the optical and electronic needs of the films. Among all the factors, film thickness is the most important factor to the characteristics of the films.In this paper, using the XRD analysis, we find that adding film thickness and increasing substrate temperature can obtain the excellent microstructure as well as the optical and electronic characteristics of the films. But it is inadvisable to adopt too high substrate temperature. So to control the substrate temperature in an appropriate range is very important. The effect of deposit rate on films' structure is less important, so the limit for it is loose. Impurities can destroy the microstructure of the films and affect the optical and electrical performance. Proper adulteration can improve the capability of the films. The effect of the anneal surroundings on the performance of the films is very prominent. Annealing in vacuum is the most adoptable method. The films also can be annealed in air or reductive circumstance according to the requirement.By sufficiently making use of the knowledge of the semiconductor, we have analyzed the transference and scatterance of the carriers as well as their emergence and being captured by disfigurement in crystal lattice from angles of crystal micromechanism, the structure of the energy band and the crystal potential field. Once we relate the micromechanism with macroscopical optical and electrical property, the reliability of the results and the persuasion of the analyses are enhanced.