| Film techniques belong to an interdisciplinary subject, whose development and application are related to almost all the fields. In this thesis, thin films of antimony-doped tin oxide with good optical and electrical properties have been deposited by the sol-gel dip-coating method by using inorganic metal salts SnCl2·H2O and SbCl3 as precursors.The crystalline microstructures and surface morphologies of as-prepared ATO films were observed and analyzed by the X-ray diffraction (XRD), atom force microscope (AFM) and optical microscope. The optical transmission of the films was measured by UV-visible light spectrophotometer and its influencing factors are discussed. We explained the experimental process and principle of the ATO thin films prepared by sol-gel method on glass substrate in room temperature, and discussed the growth mechanism of ATO films.It has been found that the heat-treatment temperature, film thickness and Sb doping level have strong influences on the microstructures and composition of SnO2 films. With the increase of the annealing temperature and film thickness, the crystallinity of the films is improved and the grain sizes became larger. The SnO2 crystals exist mainly as tetragonal rutile structure, despite of some rhombic SnO crystals at temperature of 500°C.The analysis of the optical and electrical properties of the ATO thin film derived by sol-gel process indicated that proper Sb doping level (10mol%) would significantly increase the conductivity, but also maintain the high visible light transmission. With the increase of the film thickness, the sheet resistance and the transmissivity would obviously reduce. Likely, the higher annealing temperature would result in the reduction of the sheet resistance, but had little effects on visible light transmission. The ATO thin films deposited by sol-gel dip-coating technique have good transmission (~85%) and low sheet resistance (120/) by choosing the proper processing parameters (e.g. 10mol%, 3 layers, 500°C).
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