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Investigation Of Flow Process Of Gases In The Mocvd Reactor

Posted on:2006-12-10Degree:MasterType:Thesis
Country:ChinaCandidate:Y ChenFull Text:PDF
GTID:2132360155467177Subject:Fluid Machinery and Engineering
Abstract/Summary:PDF Full Text Request
MOCVD(Metal Organic Chemical Vapor Deposition )is a technique of manufacturing film material for semiconductors,metals,metal-oxides,metal-nitride etc. These thin films are mainly applied in micro-electronics and optical-electronics fields, so the film thickness and the compositions' uniformity which is mainly influenced by the flow and heat transfer characteristics of mixing gases in the reactor are very important. Because of the complicated transport process and invisible characteristics, domestic researchers have carried out few explorations on internal flow and temperature distribution of the MOCVD reactor. So it is necessary to master some fundamental features of its internal flow through numerical simulation in MOCVD reactor.The development of MOCVD in home and abroad has been iterated. Those components of the MOCVD system and the typical configurations of the MOCVD reactor are described. Based on the planet reactor and the two-inlet MOCVD reactor, a new MOCVD reactor is developed here according to the principles of MOCVD depositing films. This reactor has three inlet pipes with different diameters. The distance between inlet and heater can be adjusted, and there is a rotating movement of the heater.A 2D axial symmetry model of the MOCVD reactor has been built up in terms of MOCVD reactor configuration. The commercial software GAMBIT is used to generate unstructured grids of the MOCVD reactor, And Fluent, a popular commercial CFD software, is applied to solve the three conservation equations by upwind finite volume method and SIMPLE algorithm.Focusing on the five analytic parameters of reactor pressure, distance between the end of the inlet and the heater surface, flowrate, boundary conditions of the reactor's upper wall and rotating speed of the heater, the optimal numerical condition has been investigated respectively by changing only any one of the five parameters. The best results are obtained under conditions of low-pressure, short-distance between inlet and heater, certain rotating speed of the heater and uniform flowrate of the two inner pipes.Through comparison between the numerical results of this paper and the reported measurement data, the results here have been proved to be more consistent with those experimental data,which can provide a sound basis for depositing uniform film.
Keywords/Search Tags:MOCVD reactor, flow field, temperature distribution, CFD, SIMPLE, numerical simulation
PDF Full Text Request
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