The Device Simulation Of GaAs PCSS's

The ultrashort electromagnetic pulse generated by the Photoconductive Semiconductor Switches(PCSS's) has gained application in a wide technological field such as radar,communication,THZ imaging and so on. By contrary with traditional switches, PCSS's prove to be advantages in the high-speed response to laser pulses,jitter-free,low inductance,high repetition rate and simple structure.On condition that the input laser pulse is fixed, the output of the electromagnetic waveform is determined by the transportation of the carrier within the switches. Besides the energy-band structure of the switch material itself, there are many other factors exerting their influence on the transportation, i.e. the mechanism of the scattering and the electric field within the switch including the biasing electric field,the space charge electric field formed by the transient distribution of photo-generated carrier. Because of the complex of the physical mechanism of the PCSS's, even now there're still many things unknown to us. So it's necessary to analyze and simulate the PSCC's.By the Monte Carlo method, this paper is to simulate physically some of the characteristics of the PCSS's , taking into consideration its physical model and mechanism. As a result, three correlative curves are got. One is concerning the electron occupying rate and the electronic field intensity, and another is concerning the drafting velocity and the electronic field intensity. The last one is concerning the electron scattering ratio of X energy-band and the electronic field intensity between different IDP (Intervalley Deformation Potential). At the same time the circuit simulation is done by the PSPICE in the linear mode, and the correlative curve concerning the simulating time and the load voltage is got too.