| Growth of poly-Si1-xGex thin film on SiO2 substrate with a advanced thin filmpreparation equipment------UHVCVD has been researched in this paper. Two aspectshave been researched: one is to find out the optimum growth parameter which poly-Si1-xGex can't deposit on non-crystal substrate easily, so as to increase the incubation time and achieve selective epitaxial growth in the application of the sub-micron IC process;the other one is to realize the rapid deposition of poly-Si1-xGex on SiO2 with Ni-layer induced which will be used in the thin film transistor (TFT) fabrication, the effect of growth atmosphere on selective growth of poly-Si1-xGex thin films by UHVCVD has been studied.we find out that H2 and Ge content has an apparent effect on the selective growth when the temperature is above 550℃. And the effect of interaction between H2 and GeH4 become dominant below 550℃. In comparison with various growth parameters, the optimum growth atmosphere is determined: the optimum temperature is 580℃and the flow ratio of SiH4. GeH4 and H2 is 5:0.5:4.5. the incubation time can reach up to 40min with high crystalline quality under the condition.Growth of poly-Si1-xGex thin film using Al and Ni as induced layer under high and low pressure by UHVCVD was researched,respectively.We found that Both Al and Ni could induce poly-Si1-xGex growth under high growth pressure , but the distinction of the surface of the two samples is remarkable. Ni is more suitable for induced metal .Then the solid reaction of NiSi has also been researched and the mechanism of the growth of poly-Si-(1-x)Gex using Ni induced layer is been studied. Growth of poly-Si1-xGex on SiO2 substrate using different buffer layers and Ni induced layer was researched .It is found that good crystallization thin film of poly-Si1-xGex could be synthesized using Si buffer layer and Ni induced layer.AES,XPS are used to analyze the profiles of Ni,Ge,Si in the poly-Si1xGex thin film and the mechanism of the method has been studied at last.
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