| Zinc oxide(ZnO) as a wide band-gap compound semiconductor with wurtizite crystal structure is a novel film with wide band gap energy of 3.37eV and a exciton binding energy 60meV at room temperature. ZnO thin film is used widely and effectively in the fields of surface acoustic wave devices, solar cell, gas sensors, varistors and so on because of its excellent piezoelectrical performance.In this paper, the Al3+-doped ZnO thin films were prepared on Na-Ca-Si glass substrate(microscope slides)by Sol-Gel process from 2-methoxyethanol solution prepared by Zinc acetate as premonitory, monoethanolamine as stabilizator and aluminum chloride reaction. Homogenous, transparent, polycrystalline ZnO thin film was formed finally by doping coating conducted for film-plate on substrate, drying, pre-heat-treatment, anealing.Optimums study of technological parameters for the preparation of ZAO thin films by sol-gel was carried through L9(34)orthogonal design. The optimum technological parameters for the best optical and electrical properties of ZAO thin films were that the sol concentration was 0.5mol/L, the dopant concentration was 1.5atm%, the annealing temperature was 600℃, and the number of coatings was 12.The structural, optical and electrical properties of ZAO thin films were studied by a X-ray diffraction(XRD), a scanning electron microscope(SEM), a spectrophotometer and a four-Point Probe method. The result showed that the sol concentration, the dopant concentration , the annealing temperature , the number of coatings had influence in various degree on the photoelectric performance of the ZAO thin films. Increasing the dopant concentration and the annealing temperature could reduce resistivity of thin films, but too many dopant concentration and too high annealing temperature would increase the resistivity of thin films instead. Increasing the density of the sol and the number of coatings could increase the thickness of thin films, the increase of the thickness of the thin...
|
PDF Full Text Request