The Study On The CdTe/CdS Soalr Cell Device Characteristics

In recent years, the study and application of thin film solar cells is the focus of the photovoltaic field. The polycrystalline thin films CdTe receI-Ve much attention as its high absorber efficiency and low-cost. The stability of solar cells is an . important aspect for research, especially for the sweeping application and development. In this paper, the dark I-V characteristics at different temperatures and the C-V characteristics at different frequencies of the CdTe solar cell were measured. And the transportation mechanism of the electric charge was discussed. The stability under continuous illumination was also studied which provide a basic reference for the application of the device. The stability under high energy electron radiation of the device was studied to explore the possibility of special application of the CdTe solar cells,In this paper, the C-V characteristics were measured in the frequency range from 50 KHz to 1MHz and the carrier concentrations of the absorber layer and the space charge region width were calculated. The C-V curves present two peaks and the intensity and position of the peaks are dependent on measurement frequency. The results are simulated and explained from the multi-junction model. A reverse Schottky junction may be formed at the back contact layer. It can be concluded that the diffusion capacity is dominant according to the intensity of the peak and its change along with the frequency.The dark I-V characteristics of the CdTe solar cell were measured in the temperature range from 220 K to 300 K. The dependences of the reverse dark...