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Research On The Technology Of Pulsed Power Generation With Nanosecond Rising-Time Based On The Series Of Solid State Swithes

Posted on:2007-05-10Degree:MasterType:Thesis
Country:ChinaCandidate:C LiuFull Text:PDF
GTID:2132360212967166Subject:Electrical Engineering and Automation
Abstract/Summary:PDF Full Text Request
Pulsed power technology is a new technology which came out with the development of top power weapons, environment protecting technology and biology technology, it is the basic of many high-tech and the investigate hotspot of many countries. With the development of this technology, it's application areas are more and more abroad. The evolution of pulsed power technology has largely relied on the improvement of the switching units. For most pulsed power generators, the output power level, the repetition rate, and the lifetime are determined by the capability of the switches. In addition, the output pulse shape and the pulse-to-pulse stability usually depend on the performance of the switching units. But by the present manufacture technology, there be none new single unit can satisfy both the voltage level and the speed level, so how to solve the problem that are the voltage level in topology and the speed level in drive technology is the key factors in the development of the pulsed power technology.In this paper, the general high voltage pulsed power supply are analyzed and compared. A novel topology of high voltage fast front pulsed edge power supply which is based on the series of power MOSFETs is proposed. The MOSFET is driven by IR2110, it is simple and convenient to use. Using this method can achieve the simply control of series MOSFETs. In structure, each MOSFET is paralleled with a large resistance. By using this method the switching units can endure a quite high voltage, so the output pulse waveform's amplitude is larger than many thousand volts. The big resistance can protect the MOSFETs and make sure there were nearly the same volts on each MOSFET. In addition, by analyzing the inside structure of MOSFET, three methods to quicken the pulse front edge are presented. All designs were proved to be correct and effective through simulations and experiments.In this paper, the general pulsed power supply switch combination is improved in the form of topology. It abandon the general pulse transformer single control switch combination, in a certain extent, and solve some problems on the design of pulsed power supply presently, it also saves the cost, reduces the bulk of the power, particularly adapts to the laboratory research of high voltage pulsed power supply.
Keywords/Search Tags:Pulsed Power, Power MOSFET, Nanosecond Front Edge
PDF Full Text Request
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