| Compared with the traditional EEPROM and FLASH memory, the new non-volatile ferroelectric memory (FeRAM) have many advantages, such as low operating voltage, low power consumption, long-time retention, quick writing-operation and outstanding anti-radiation characteristics etc, which are very suitable for the requirements of embedded applications. With the electrical and magnetic ordering, Ferro bismuth (BiFeO3) has attracted much attention as it shows good ferroelectricity and weak ferromagnetism simultaneously. It provides potential application in new type of nonvolatile Ferroelectric random access memories (FeRAM). Therefore, this paper mainly focused on the research of BiFeO3 thin film.In this paper, Ferroelectric ceramic BiFeO3 targets with 10% excess Bi2O3 were prepared by the conventional solid-state route. Differential thermal analysis(DTA) and X-ray diffraction (XRD) were used to analysist sinter temperature as well as the structure. Experimental analysis showed that the optimal sinter temperature is 830°C.A series of ferroelectric thin films were prepared by magnetron sputtering. Fabrication parameters, such assubstrate temperature, work pressure, sputtering atmosphere, and post annealing were examined in terms of their influences on the ferroelectric characteristics of the ferroelectric films. Experimental analysis showed that the optimal deposition conditions for BiFeO3 thin film are as follows, substrate temperature: 300°C, work pressure: 3.5Pa, sputtering atmosphere: O2:Ar =1:10, annealing temperature: 550°C, annealing time: 20 minutes. In addition,BiFeO3 thin film with La doped (BLFO) were prepared by magnetron sputtering. The structure and the surface morphology of BLFO ferroelectric thin films were studied by XRD and SEM..The ferroelectric characteristic was examined by RT66 and The ferromagnetic characteristic was examined by VSM.
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