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Research And Development Of The High Capacity D-statcom Main Circuit Based On Igbt

Posted on:2011-03-21Degree:MasterType:Thesis
Country:ChinaCandidate:Z J WangFull Text:PDF
GTID:2132360305987784Subject:Power system and its automation
Abstract/Summary:PDF Full Text Request
Reactive, harmonic and asymmetry current in the power network, seriously affects the safe operation of power network. As a new Var compensator, the Static Synchronous Compensator (D-STATCOM) attracts extensive attention for its perfect performance such as accurate, immediate and syntheses compensation.In the paper, the main circuit of D-STATCOM is studied deeply. Firstly the basic topology of the D-STATCOM is introduced. Then, all kinds of D-STATCOM main circuit topology is analyzed and compared. In succession, the mathematical model of D-STATCOM is established, and the method to calculate key parameter is present. Later, the drove and shield of the igbt is approached.At last, Matlab simulation similation experiment is proceeded. The result shows that the designed device can compensate reactive,harmonic and asymmetry current.
Keywords/Search Tags:Static Synchronous Compensator(STATCOM), main circuit, IGBT Drive Monolithic Circuit, matlab simulation
PDF Full Text Request
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