Preparations And Properties Of SiC Thin Films And Buffer Layers

SiC is an ideal semiconductor material due to its excellent electrical characteristics and mechanical properties, and it can be used for the harsh environment. SiC has a larger band gap, high thermal conductivity, high temperature corrosion resistance and chemical stability. It has a broad market and bright future when SiC material is used for the surface coating of semiconductor devices and structural materials.In this paper, amorphous SiC films were prepared on the Si(100) and stainless steel substrates at room temperature by RF magnetron sputtering, then were changed into crystalline SiC films with annealing process. In order to obtain the high quality SiC films, TiN, Al2O3 and AlN buffer layers were prepared on the substrates respectively. The effects of gas pressure, gas flow, sputtering power and annealing temperature on the film structures were given. We researched the technology of SiC thin films grown on the stainless steel and silicon substrates, and discussed the effects of process parameters on SiC thin films growth and performance. By XRD, AFM, PL, hardness testing and other means, the structure, morphology, optical properties and mechanical properties of the films were characterized. The main contents are as follows:The first chapter outlines the SiC crystal structure, properties, preparation methods, research situation and application prospects. Through the analysis of SiC crystal structure, properties and preparing processes, we can understand the SiC material deeply.The second chapter introduces the development and the principle of magnetron sputtering, and describes the deposited processes of films and gives a summary about how to inspect the thin films.Chapter three researches the effects of sputtering parameters on SiC thin films grown on different substrates, such as sputtering pressure, Ar flow, bias and annealing temperature. The XRD, AFM and hardness testing are used to characterize the structure, morphology and performances of the SiC films.The fourth chapter mainly discusses the TiN, Al2O3 and AlN buffer layers, and analyses the effects of substrates, gas pressure, gas flow, sputtering power and annealing temperature on the structure of these films.Chapter five mainly discusses the different performances about single layer SiC film and bilayer SiC film on TiN, Al2O3 and AlN buffer layers then analyses the impacts of annealing on optical properties of SiC thin films on Si(100) substrates, finally researches the effects of annealing on hardness of SiC films grown on stainless steel substrates. Chapter six gets conclusions and outlooks future.