Studies On Grain-boundary States In Polysilicon Films FET

Collaborated with the laboratory of professor Swanson , department of Electrical and E lectronic E ngineering, K ing's C ollege , t he e xperiment u sed i n t his p aper i s carried out successfully. The technique that Opto-Electronic Modulation Spectroscopy(OEMS) using wavelength modulated monochromatic illumination to cyclically excite the trap states first is used in the polycrystalline silicon thin film field effect structure. By means of experiment , response spectrum and phase spectrum are achieved . The spreading of energy phenomenon is noticed . Thereout , the a-Si:H model of grain-boundary is put forward . By analyzing , six energy levels under conduction band are gained . Furthermore, other information is obtained . The proper analysis in the trap states is one of the cores in VLSI , so this paper has determinate realistic significance .