A Study Of A Novel Method For Semiconductor Device Simulation

With the rapid development of integrated circuits, semiconductor device simulation is becoming more and more important. The traditional methods are mainly numerical methods.A novel method for semiconductor device simulation is proposed, in which Adomian's composition theory is utilized and applied to solve the system of semiconductor device equations which are strongly coupled and seriously nonlinear. The idea and implementation of this technique are detailed, and the technique is used to simulate the quiescent characteristics of a diode and SOI MOSFET. Some important parameters such as the profile of potential and carriers are solved, and â… -â…¤ characteristic of a diode, the expression of threshold voltage, the output characteristics and transfer characteristics of SOI MOSFET under static condition are derived. Comparison of the results obtained with the results by numerical method demonstrates that both of them are consistent with each other. This shows that Adomain method can be used to simulate the semiconductor devices. Moreover, Adomain method is characterized by definite concepts, easy utilization and fast convergence by comparing with traditional numerical method.