The Solutions Of Doped Poly Defect In 90NM Nrom Word Line Process

The development of semi-conductor technology has been making the CD of device changed from 90 nm to 45nm generation. And the 32nm , 28nm generation has started to research and apply. The 90nm Nitride Read Only Memory (NROM) manufactured by SMIC is a FLASH product; it has an ONO structure (Oxide/Nitride/Oxide) and stores the signal by nitride layer which could capture the electron. Since year 2010, NROM product began to do mass production in SMIC. During the period of mass production, a great deal of defects was detected in word line doped poly layer, which is the furnace process. The 3 main defect types in word line poly include bump, slice and surface defect. This defect in word line poly layer would cause the yield loss or even the product scrap.This topic will do the research to the bump, slice and surface defect in word line poly layer. Using many analysis methods and combining the DOE to find out the root cause of the defect coming source, establishing the defect occurred mode. Discovering the most optimized defect solution plan by designed many experiment, solving defect problem in the word line poly layer is our final purpose. We hope the solved defect problem can decrease the production cost, enhance the production efficiency and yield.