Analysis Of Radiation Effects On MOS Devices

With more and more application of IC in radiation circumstance, research on damage mechanism of radiation effects on semiconductor devices and circuits and the way to improve the anti-radiation ability of them becomes an important topic in microelectronics both in our country and abroad. As base of IC, the anti-radiation ability of Si device becomes key problem of the research.First, one of the main radiation effects, total dose effect is introduced in this paper, the mechanism of total dose effect and damage to MOS devices are also presented. Threshold shift of MOS devices is the main damage caused by total dose radiation effect. Through numerical calculation, the relationship between threshold shift of MOS devices and total dose of radiation effect is established, and also verified through simulation by ISE software. Secondly, the advantages of SOI and its disadvantage in anti-total dose effect are presented. The near relationship between threshold shift of SOI and total dose of radiation effect is also established and verified by ISE software. In the end, the relationship between threshold shift of SOI under radiation condition and bias condition of devices is analyzed and verified by IES software.