Effects Of Preparation Temperature Of SiC Intermediate Layers On The Hemocompatibility Of SiC/F-DLC Composite Films

A series of SiC intermediate layers with different preparation temperatures were prepared by radio frequency magnetron sputtering on316L stainless steel substrates by using SiC as crystal target and Argon as source gases. And then depositing fluorinated diamond-like carbon films (F-DLC) on the series of SiC intermediate layers under the same deposition condition with trifluromethane (CHF3) and Argon as source gases, and pure graphite as a target, so series of SiC/F-DLC composite films come into being. The results show that the composite films have stronger adhesion and better hemocompatibility than that of F-DLC films. The structure evolution with preparation temperatures of SiC intermediate layers and SiC/F-DLC composite films were studied by their Raman and Infrared transmission spectra. It shows that the proportion of C=C bonds and density of-C-C-unsaturated bonds in the SiC intermediate layers can be modulated by controlling of the preparation temperature of SiC intermediate layers. The composite films have better hemocompatibility, especially with about500℃preparation temperature, which may be attributed to holding higher proportion of aromatic ring structure and higher ratio of F/C in the composite films than the others. Formation of considerable amounts of Si-C bonds and C=C bonds between SiC and F-DLC films may be the direct reasons of strong adhesion. The addition of modest SiC intermediate layers between316L stainless steel substrates and F-DLC films is feasible and effective to enhance films adhesion and improve films hemocompatibility.