Property Research AZO And AZO/Cu/AZO Thin Films Prepared By Radio-frequency Magnetron Sputtering

In the recent years, ZnO film material is widely used in optoelectronic devices.ZnO as a band gap width to3.3eV semiconductor material have advantages in latticestructure, optical and electrical. Because of its low resistivity, higher visible light hightransmittance, and its raw material reserves, low price, the preparation process doesnot produce pollution, ZnO:Al （AZO） thin films maybe replace of the ITO films.Magnetron sputtering technology, one of the AZO thin film preparation technologies,has a relatively high uniformity and deposition rate, is believed to be an idealpreparation technology to preparing AZO film.In the first and second chapters, we first review ZnO films and ITO filmsstructure, properties and development situation. Then introduce the single-layer AZOfilm and mutli-layer AZO/Cu/AZO film properties and application. At last, wedescript the AZO thin film preparation and characterization methods.In this experience, single-layer and multi-layer AZO film samples were preparedon common floating glass by magnetron sputtering technique. High purity metallicZnO: Al₂O₃（purity:99.9%,Al:2wt.%） target was used as source materials. Afterinvestigating by X-ray diffraction （XRD）, Scanning electron micro-scope （SEM） andUV-Visible Spectrophotometer （UV-Vis）, we analyze the different parametersinfluence on AZO films structual and optoelectronic properities. The results show asfollows:It’s verified that substrate temperature, bias-voltage and annealing atmospherehave great effect on lattice structure, optical and electrical properties of AZO films byanalyzing the experimental data. All the prepared thin film samples are polycrystallineform of wurtzite structure with the preferential orientation of （002） diffraction plane,have well transparency in visible range. When the single-layer AZO film preparedin the condition of bias-voltage60V and substrate temperature200℃will have thebest properties and visibly lower resistivity after annealing in air or N2. While themulti-layer AZO/Cu/AZO film prepared in the condition of the sputtering power120W and the substrate temperature250℃will have the best properties.The film exhibited average transmittance over81%in visible range, the lowestresistivity9.2×10-4cm when prepared at the substrate temperature200℃, sputteringtime30minutes, bias-voltage60V, annealing temperature300℃. While the film lighttransmittance is75%and the lowest resistivity is7.2×10-4·cm when prepared at the sputtering power120W, the substrate temperature250℃, the sputtering pressure0.5Pa.