Research On Characteristics Of Metal-doped ZrO2Films Deposited By Reactive Magnetron Sputtering

Zirconium dioxide (ZrO2) thin films have been widely applied to memory ma-terials, microelectronic materials, high power laser system, oxygen sensors, optical coatings, because of their high hardness, good wear resistance, corrosion resistance, chemical and thermal stability and superior optical characteristics. Therefore, it is valuable to prepare high quality ZrO2thin films and metal-doped ZrO2thin films for studying and improving the properties of ZrO2thin films.ZrO2thin films are deposited on Si (100) and glass substrates by means of direct current (DC) reactive magnetron sputtering method in this thesis, respec-tively. The optimal film sample of (111) preferred orientation for monoclinic phase is obtained by changing deposition parameters. And the optimal film samples on deposited on Si (100) substrate are annealed at800℃,900℃and1000℃, re-spectively. It was indicated from X-ray diffraction spectrum and Raman spectrum that the film has a more excellent crystallinity. The scanning electron microscope images show that the grain size become larger and uniform. The reflectivity and transmittance of the film are measured by ultraviolet, visible and near infrared spectrophotometer. The transmittance of the films gets bigger with the increases of oxygen percentage and work pressure. And it is shown that the annealed samples have lower reflectivity.Al-doped and Cu-doped Zirconium dioxide films on Si (100) and glass sub-strates are prepared by radio frequency (RF) and direct current (DC) reaction co-sputtering, respectively. The Al and Cu doping make the diffraction peak inten-sity of X-ray diffraction spectrum decrease. The SEM images show that the grain size of samples on Si (100) substrates become larger, and the surface smoothness and density of films on glass substrates increases due to A1and Cu doping. The re-flectivity of films gets smaller due to A1doping, but gets bigger due to Cu moderate doping. The transmittance of the films gets bigger with the increases of Al-doped power. And the Cu doping let the transmittance decrease in the visible light range, but increases in the range of900-1300nm with the decrease of Cu content. The band gap of the films is calculated. It is found that the band gap increases from4.74to4.97eV with Al doping, and it decrease from4.74to4.59eV with Cu doping.