| TiN thin film have been widely applied to abrasion resistant coatings on tool steels, decorative coatings in architecture, diffusion barrier layers in semiconductor devices, and flat-panel displays because of its excellent mechanical properties, low electrical resistivity, high chemical and thermal stability and interesting optical properties. But it is difficult to further improve TiN thin film’s performance relying on present deposition technology. Therefore, it is valuable to study the preparation of metal/TiN multilayers or metal-doped TiN thin films for further improving the performance of the TiN filmMagnetron sputtering is one of the best ways to deposit TiN thin films for its simple equipment, easily controlling and good reproducibility. Firstly, TiN thin films were deposited on Si (100) substrate by means of DC reactive magnetron sputtering and the optimal sample was obtained by changing deposition parameters in this thesis. It was indicated from X-ray diffraction spectrum that the TiN thin film demonstrated (111) preferred orientation. The results of Raman spectrum showed that the film has larger grain size and excellent crystallinity. The surface morphology of the TiN thin film was characterized by scanning electronic microscope (SEM). It was found that the TiN thin film had a compact microstructure composed of80-180nm-sized pyramidal crystal grains. The mechanical properties and optical properties of the TiN thin film were measured by MTS Nanoindenter XP and UV-VIS-NIR spectrophotometer, respectively. The hardness and modulus of the film were6.9GPa and149.2GPa, respectively. Furthermore, the reflectivity of the film was84.4%at the wavelength of1200nm. It was known that the structure and properties of TiN thin films were strongly influenced by the sputtering current by analyzing experimental parameters of the TiN thin films deposited on Si substrates.Secondly, the TiN thin films were deposited on Si (100) substrates with an Al, Ti, and Zn buffer at different sputtering current by DC reactive magnetron sputtering, respectively. The structure, surface morphology, mechanical properties and optical properties of TiN multilayer films were characterized by using the above characterization methods. By comparing with the TiN thin film deposited on Si (100) substrates, the TiN thin film grown on Si substrate with an Al buffer layer demonstrated (111) preferred orientation yet, but its crystal grains became larger. Moreover, its hardness and modulus and the reflectivity at the wavelength of1200nm all showed a downward trend. The TiN thin film grown on Si substrate with a Ti buffer layer also exhibited (111) preferred orientation, the good crystallinity and larger crystal grains, but its mechanical properties and optical properties had a downward trend. The TiN thin film grown on Si substrate with a Zn buffer layer showed (200) preferred orientation and better crystallinity, but its mechanical properties and optical properties took on an obvious decrease due to the silky floccules structure of Zn buffer layer and TiN thin film. Finally, Al-doped TiN thin films were deposited on Si (100) substrates by magnetron sputtering. The study of XRD patterns indicated that the intensity of h-AIN (100) became gradually weaker or even disappeared as the sputtering current increases. At the same time, the films presented TiAIN (200) reflection peak when the sputtering current was0.4A. The intensity of TiAIN (200) slightly increased as the sputtering current increases. Regarding Al-doped TiN thin films deposited at0.4A as the research subject, the results of Raman spectrum showed that the film has good crystallinity. The composition of the film was determined by an energy disperse X-ray analyzer (EDX) equipped on the SEM. The test result revealed that the content of Al was0.61wt%, and the film were a compact microstructure. By comparing with the TiN thin films, the result of reflective spectrum showed that there was a sudden decline near infrared region. |
PDF Full Text Request