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Reserach On Conductivity Of Silane Fluid Under Multiply Shock Compression

Posted on:2017-05-03Degree:MasterType:Thesis
Country:ChinaCandidate:H ChenFull Text:PDF
GTID:2180330485488864Subject:Condensed matter physics
Abstract/Summary:PDF Full Text Request
Since the hydrogen was theoretically predicted to be metallization and even a superconductor under sufficient high compression, the study on the problem of metallic phase transition of hydrogen has been attracted much attention of physicises. Many attempts have been devoted to get metallic hydrogen under high pressure, but it proves that the experimental conditions are more difficult to achieve than previously expected no matter in the static high-pressure experiments or in the dynamic ones. The research of conductivity of hydrogen-rich compounds came into sight of scientists, because someone predicted that metallization transformation may occur under lower pressures due to the hydrogen in these system being "chemically precompressed"Two-stage light-gas gun, combined with the cryogenic target and photoelectric measurement technique, is used to measure the electrical resistivity of silane fluid under multiple shock compressions. A group of new resistivity data in the pressure region of 7-56GPa are obtained, and the pressure dependence of electrical resistivity in wider compression is given. Together with the previously published data with the pressure of 65-138 GPa, we get conclusions as following.1. In the pressure region of 7-41 GPa, the silane fluid is found to be a good electrical insulator.2. In lnp~P plane, it is found that the pressure dependence of resistivity of silane fluid shows different changing trends in three pressure regions. The turning points at about 52GPa and 105 GPa suggest that structural transformations may occur in silane fluid. At about 52GPa, silane may transforms into to a semiconductor from the initial insulator, and at 105GPa it may be the mixture of Si+H2+SiH4.3. In the silane, a typical rich-hydrogen compound, the addition of silicon element reduces the transition pressure from insulator to semiconductor, but the expected effect of "chemically precompressed" effect to lower the metallization pressure is still not observed.
Keywords/Search Tags:Multiple shork-compression, Silane fluid, Electrical resisitivity, Structural phase transition
PDF Full Text Request
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