Study Of Deposition And Properties Of Nitride Thin Films By Magnetron Sputtering

Semiconductors have had a monumental impact on our society. Most chips, transistors, photoelectronic devices are created with semiconductor. The semiconductor industry has unique position in the economy and in the global competitive arena, which is widely recognized as a key driver for economic growth in its role as a multiple lever and technology enabler for the whole electronics value chain. Nitride semiconductor materials are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. In this paper, zinc nitride thin films and aluminum nitride thin films are deposited and studied.Zinc nitride(Zn3N2) thin films were deposited on glass substrates by reactive radio frequency magnetron sputtering from a pure Zn target in nitrogen-argon ambient. X-ray diffraction analysis indicates that the films just after deposition are polycrystalline with a preferred orientation of(400). Increasing the substrate temperature up to 300℃, resulted in filmswith(222),(321) and(422) mixed preferredorientation. With increasing the substrate temperature, the grain size of zinc nitride film increase from 26.5nm(100℃) to 33.6nm(200℃), and then decrease to 17.8nm(300℃). Atomic force microscopy revealed that surface morphology was dependent on the substrate temperature. With reflective spectroscopic ellipsometry, the ellipsometric parameters ψand?of Zn3N2 films were measured. Then, a new model for Zn3N2 films was built. With the Tauc-Lorentz dispersion formula, the ellipsometric data were fitted, and both the thickness and the optical constants(the refractive index and the extinction coefficient) of the films were obtained at the wavelength of 430-850 nm.In case of AlN film deposition using magnetron sputtering in mixture of argon and nitrogen, parameters such as the substrate temperature, the N2 partial pressure, the total gas pressure and the substrate materials have a strong influence on the properties of the films.(1) The influence of substrate temperature on the AlN thin films properties was obvious. With the temperature increasing from 100℃ to 500℃, the grain size of AlN films increases, the refractive index and band gap of the films increase.(2) With the increasing N2 concentration, the(100) and(110) peak of AlN films. When the N2/Ar=1:2, the peaks are strongest. Further increasing the N2 concentration(N2/Ar=1:1), the peaks decrease. In addition, the deposition rate of thin films decreases, with the N2 concentration increasing.(3) As the working pressing increase, the intensity of XRD peak decrease gradually.(4) Due to lattice mismatch, the AlN films deposited on the silicon are worse than the films on glass and quartz.