| Cubic boron nitride (CBN) thin films haves significant and Potential technological application Prospect in cutting tools, electronic and optical devices,etc.,because CBN possesses excellent physical and chemical properties, such as ultrahigh hardness only inferior to diamond, inertness against oxidation at high temperature, uneasy reaction with iron group metal, as well as the possibility of using as n-type and p-type doped semiconductors. The preparation and property research of cBN film have been one of difficult and attractive field in the scientific world, This dissertation focuses on the preparation of high quality cBN films and the characteristic of BN schottky contectionBoron nitride (BN) films were deposited on Si substrates using the conventional radio-frequency (RF) sputtering system, with hexagonal boron nitride (hBN) target and working gas of mixture of nitrogen and argon. The research for doping of CBN was carried by implantation. Sulfur (S) was employed as n-type dopant and the corresponding conductive types was achieved. In order to research the electrical properties of c-BN thin film, The I-V characters of the p type c-BN film formed with an ion implantation method doping S was measured by KEITHLEY 4200 high resistance meter. Found by observing the I-V characteristic curve cubic content is, the more obvious characteristics of the curve rectification. I-V curves were measured by analysis of the annealing temperature, doping dose exposure of half of the gold was found when the annealing temperature reaches 900 degrees to achieve contact characteristics changes.Silicon is a kind of excellent semiconductor material and is one of the core materials of microelectronics. But it is not a fine luminescent material. The photoluminescence (PL) will be obtained by excitation only when the size of silicon partials reduced to a certain value. Nanocrystalline silicon films have special structure and many excellent optoelectronic properties and are supposed to be applied in optoelectronic devices and large scale integrated circuits.In this paper, Nanocrystalline silicon films were deposited on silicon substrate by RF magnetron sputtering with pure Si target. And the working gas is the mixture of oxygen and argon .The content of O2 in working gas (O2/ O2 + Ar) and the power of sputtering were changed separately .However, the substrate temperature, working gas pressure and other conditions were definite. After annealing in the stove, we got the Nanocrystalline silicon particles In the thin films Fourier transform infrared (FTIR) transmittance measurement was carried out to characterized Nanocrystalline silicon films. X-ray photoelectron spectroscopy (XPS) measurement was also performed to estimate the atom ratio of the Nanocrystalline silicon films. Raman scattering measurements was also taken in to characterize the Nanocrystalline silicon films. With the increase of annealing temperature, 810 cm-1 for the peak decreases and moves to higher frequency, this phenomenon illustrates the film in the annealing process of phase separation occurred. Analysis by XPS graph obtained silicon atom ratio of oxygen is about 1:1, the results showed that the films were annealed silicon oxide film is rich silicon oxide. Finally, Raman mapping has been the grain size is 7nm.
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