Study Of Measuring Methods And Fabrication Of Perpendicular Thin Films For Optical/Magnetic Recording

In this thesis, TbFeCo amorphous thin films and Ta/Pd/CFAS/MgO/Pd multilayers with perpendicular magnetic anisotropy(PMA) were deposited on the Si substrates by magnetron sputtering system. The relationship between PMA and sputtering conditions was studied.Firstly, we builded measurement system for magnetic films with perpendicular magnetic anisotropy based on magneto-optic Kerr effect and anomalous hall effect.Secondly, TbFeCo amorphous thin films have been fabricated and investigated. The researches indicate that smaller sputtering power is needed to obtain high perpendicular magnetic anisotropy under a low sputtering air pressure. In a certain range of thickness, the coercivity of TbFeCo films decrease with the increasing thickness and the remanence ratio increases with the increasing thickness of TbFeCo films. We deposited FeCo-rich and Tb-rich TbFeCo films only by changing the sputtering power, it indicates the composition of the TbFeCo films dependent on the sputtering power.Finally, Ta/Pd/CFAS/MgO/Pd multilayers were deposited on Si substrates by magnetron sputtering system. The dependence of PMA on the insert Pd layer, annealing temperature and CFAS layer thickness was studied. Inserted Pd layer between Ta and CFAS layers was crucial to obtain PMA in Ta/Pd/CFAS/MgO/Pd. For the samples of Ta/Pd/CFAS(t)/MgO/Pd annealing at 300℃, PMA were obtained when CFAS layer thickness in the range of 2.6nm and 4.3nm. The film with CFAS thickness of 3.8nm did not show PMA after annealing at 250℃.With the increasing annealing temperature, a strong PMA appeared after annealing at 300℃. After further increasing the annealing temperature, the PMA become weak and disappeared after annealing at 450℃.