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Tbfeco Magneto-optical Thin Films And Performance Study

Posted on:2009-12-11Degree:MasterType:Thesis
Country:ChinaCandidate:Y ZhangFull Text:PDF
GTID:2190360248952735Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
In this thesis, the technology of fabrication of TbFeCo/Si, Ag/TbFeCo/Si films by magnetron sputtering system were thoroughly investigated. The growth mechanism, the optical properties, the magnetic properties, and the magneto-optical properties of TbFeCo were analyzed. In addition, the AlN,SiN films were fabricated by reactive sputtering deposition and their optical properties were studied.First, the influences of sputtering on microstructure and components of TbFeCo film were analyzed using X-ray energy dispersive spectrum (EDS) and scanning electron microscopy (SEM). The results showed that supterring pressures had significant influence on components of TbFeCo film prepared by sputtering deposition and the composition of the film was most closed to that of target when sputtering pressure was 2.0 Pa. The structure and morphology of the TbFeCo/Si and Ag/TbFeCo/Si films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The results of XRD and SEM confirmed that TbFeCo/Si and Ag/TbFeCo/Si films were amorphous films.Second, the optical properties of the TbFeCo/Si and Ag/TbFeCo/Si films were investigated in the photon energy range of 1.5- 4.5 eV using Spectroscopic Ellipsometry, and the impacts of sputtering parameters (sputtering pressure, sputtering power and Ar flux) and the thickness of the Ag films on the optical properties of the films were analyzed. The results showed that the real part of the dielectric functionε1 increased significantly with the incresing of sputtering pressures, but it was decreased firstly then incresed with the increasing of sputtering power. And the relation betweenε1 and Ar flux was complex. However, the imaginary part of the dielectric functionε2 decreased with the increasing of sputtering pressure and it incresed firstly then decreased with the increasing of sputtering power. Similarly withε1 , the relations betweenε2 and Ar flux was complex. The optical properties of Ag/Si, Ag/TbFeCo/Si, TbFeCo/Si films were analyzed, and the Drude Model were used to analze the results, both of which were consistent with each other. The optical properties of A1N and SiN were also investigated, the results showed that the substrate temperature of A1N is very important to the film quality, while the gas proportions of Ar and reactive gas nitrogen in sputtering process have little impact on it.Finally, the magnetic properties and the magnetooptical properties of the Ag/TbFeCo/Si, TbFeCo/Si and Ag/TbFeCo/K9, TbFeCo/K9 films were analyzed. The results showed that Ag films have signiciant impact on the megtronic property, and the magnetoptical property of TbFeCo. When the thickness of the Ag film was comparatively thin, the remarkable enhancement of Kerr effect was observed at short wavelength. After the thickness of Ag film exceeded 50 nm, the enhancement of Kerr effect could not be observed. In addition to this, the results of magnetic and magnetooptic measurements showed that the retangularity ratio of magnetic and Kerr hysteresises loop for the TbFeCo films in this work was close to 1 when magnetic field was in the face, while it was degenerated to a line when the magnetic field was out of the face. It indicated that the magnetization of the TbFeCo films was in the face but perpendicular magnetization in this work.
Keywords/Search Tags:Magnetron sputtering, TbFeCo films, Spectroscopic ellipsometry, Kerr effect
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