Preparation And Characterization Of In_xGa_1-xN And InN Semiconductor Nanomaterial

Gallium indium nitride (InxGa1-xN) is a very important III-V compoundsemiconductor, which has a wide and adjustable range of emission spectrum. At roomtemperature, the band gap can be abjusted from0.7eV (the band gap of InN) to3.4eV(the band gap of GaN). Thanks to this unique structure and property of the energy band,InxGa1-xN is widely used in optoelectronic devices and solar cells. When the x inInxGa1-xN change to1, it become to indium nitride (InN), which is a III-V binarycompound semiconductor. It also has good optical performance, and has great potentialapplications In optoelectronic devices and solar cells.In this paper, we described the method of preparing InxGa1-xN and InN nanomaterialsby chemical vapor deposition (CVD). And we use scanning electron microscopy (SEM),X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared absorptionspectroscopy (IR) and fluorescence spectroscopy (PL) to analyze the characterization ofthe samples. On the basis of the experiments, reaction mechanisms were discussed.We used the direct reaction gallium chloride, indium chloride and ammonia tosynthesize InxGa1-xN nanomaterials of different sizes and morphology by chemical vapordeposition (CVD) method. Many factors for the morphologyand optical properties ofInxGa1-xN had been investigated, such as single or dual-zone temperature zone, thereaction temperature, catalyst and surfactant. The results showed that, after the addition ofAlCl3·6H2O surfactant, the surface of the sample prepared by the single-zone methodbecomes smooth, the crystallinity becomes better, and the morphology tends to rule.InxGa1-xN nanoflowers had been systhesized by the dual-zone method. As the products hadIn element, compared with bulk GaN, the fluorescence spectra were red-shifted.InN nanowires were successfully synthesized by the CVD method using the directreaction of ammonia and indium oxide. The XRD results indicated that the product couldbe indexed as wurtzite-structured, hexagonal phase InN, and the TEM and SEMcharacterize the morphology of the sample. The effects of temperature and time on themorphology of InN nanowires were also studied. The results showed that these two factorsplayed an important role in the synthesis of uniform and stable InN nanowires. The optical properties of InN nanowires were detceted by fluorescence spectroscopy, and the samplesshowed redshift nature, which would greatly enhance the prospects of nano-sized InNdevices.