Preparation And Characterization Of Inp Nanowires And Their Optical Property

Indium phosphide (InP), an important III-V semiconductor, has a direct band gap of1.35eV at room temperature. Nanoscale-sized InP has attracted prime interest fornanostructure research because of its potential applications in electronic andoptoelectronic devices. Herein, we report two synthesis methods using only simplesubstance as reagent. To our best knowledge, such attempts have never been performed.XRD, TEM, SEM, Raman spectrum and photoluminescence spectrum were used tocharacterize the samples.Crystalline InP nanowires were successfully synthesized by chemical vapordeposition method using red phosphrous and metal indium as primary reactants. Theobtained product can be indexed as sphalerite-structured, cubic phase InP with averagewidth. We have investigated the influences of direct solid synthesis process with singletemperature area and the improved CVD process with supplementary phosphrous sourceon the crystallization, morphology and optical property of the samples. The resultsindicate that the improved CVD process will greatly ameliorate the crystallization andquantity of InP nanowires. The impurities and crystal defects may result in the blue shiftof InP Raman spectrum and photoluminescence spectrum. On the basis of the experiments,reaction mechanisms are discussed.InP nanowires with single crystalline and twinning structure have been successfullysynthesized by solvothermal synthesis method using indium powder and white phosphorusas the reactants, and benzene as the solvent with cetyltrimethyl ammonium bromide(CTAB) assisted. Results from XRD suggest that the synthesized product can be indexedas sphalerite-structured, cubic phase InP. TEM and SEM were employed to study themorphology of the as-prepared products.We have studied the influences of CTAB andreaction temperatures on the InP wire morphology. Results indicate that the two factorsplay the important roles in synthesizing the stable and desired patterned nanowires. On thebasis of our findings, possible mechanisms are discussed. Raman spectra andphotoluminescence spectrum can reflect the optical property of InP nanowires, and PLspectrum shows blue-shift compared with that of bulk InP, which will certainly increase the application of InP nanoscale devices.