Study On Preparation And Luminescent Properties Of Composite Based On Ⅱ-Ⅵ Semiconductor Nanoparticles Enclosed In Layered Silicates

The composites based on semiconductor nanoparticle ZnS, ZnO, CdS or ternaryZn1-xCdxS incorporated into magadiite, octolicate, or δ-Na2Si2O5layered silicateshave been obtained by multi-step ion-exchange method. Various characterizations,including X-ray diffraction (XRD), Inductively Coupled Plasma Atomic EmissionSpectroscopy (ICP-AES), CHN Element Analyzer, Thermogravimetric (TG) Analysis,Fourier Transform Infrared Spectra (FT-IR), Scanning Electron Microscope Equippedwith Energy Dispersive X-ray Analysis (SEM-EDX), Transmission ElectronMicroscope (TEM), Photoluminescent Spectra and UV-vis DRS, have been used toinvestigate the structure, composition, morphologies, and optical property of thecomposites. XRD results are found that the basal spacings increased obviously afterthe semiconductor nanoparticles were incorporated into interlayer of layered silicates;PL and UV-vis spectra suggested that the PL emission peaks or UV-vis transimissionedges shifted while the semiconductor nanoparticles were enclosed in host silicates;IR results indicated that the structure of layers remained through protonation andion-exchange of Zn or Cd ions; TEM confirmed that the sizes of semiconductornanoparticles incorporated into host silicates were estimated to be2.5~5.0nm. Allthese results indicated that the sizes of semiconductor nanopsrticles incorporated intohost silicates were confined by the host layers, leading to varied optical property ofthe semiconductor nanoparticles. The chemical stability (acid resistant, base resistant,oxidationresistant) and thermal stability of semiconductor nanoparticles (ZnS, CdS,Zn1-xCdxS, ZnO) should be improved after they were intercalated into these hostsilicates, which will be favorable for expanding the application scope ofsemiconductor nanoparticles and also open up a new applied field for layeredsilicates.