Study On New Type Of Cerium Oxide Slurry And Its Polishing Performance

In order to obtain microcrystalline glass with super smooth surface, grinding and polishingshould be used in the actual production. CeO2polishing slurry is widely used in polishing ofmicrocrystalline glass because of its advantages such as fast polishing speed, high planeness and goodselectivity. The dispersion property of micrometer and nanometer CeO2powder in alcohol-aqueousmedium are studied and the dispersion process are studied in this article. Using the optimized CeO2polishing slurry to do chemical and mechanical polishing (CMP) experiments on the microcrystallineglass and its polishing process are carried out.This article’s main work are as follows:1. In CMP technology, abrasive particles which disperse fully in the liquid is the premise toensure the quality of CMP. Wultrasonic dispersion method is used to learn how diverse volume ratioof alcohol-aqueous, ultrasound time and dispersing agent influence the dispersing property ofmicrometer CeO2powder. The optimized dispersing condition was65v%of alcohol,1.5m%of PVPand ultrasonic time of15min. Balling milling method is used to learn how diverse volume ratio ofalcohol-aqueous, ball-milling time, ratio of grinding media to material, ball mill rotate speed,dispersing agent influence the dispersing property of nanometer CeO2powder. The optimizeddispersing condition was30v%of alcohol,1m%of PVP,12h of ball milling time,500r/min of ballmill rotate speed and10:1of ratio of grinding media to material.2. Taguchi method was used this article to design the experiment. Using micrometer andnanometer CeO2polishing slurry to polish microcrystalline glass. Every processing parameter, such aspolishing pressure, spindle speed, polishing flow and polishing time, which affected the surfaceroughness and material removal rate in polishing glass-ceramics were experimentally described indetail. To micrometer CeO2polishing slurry, the optimized condition was0.075MPa of polishingpressure,150r/min of polishing rotate speed,15min of polishing time and15ml/min of polishingslurry. To nanometer CeO2polishing slurry, the optimized condition was0.05MPa of polishingpressure,100r/min of polishing rotate speed,45min of polishing time and15ml/min of polishingslurry.