The Research Of Manufacture And Characteristics Of Inorganic/Organic Semiconductor Nano-heterojunction With ZnO/NPB And ZnO/PFO

In recent years, many researchers try to combine new organic semiconductor materialwith traditional inorganic semiconductor material to manufacture inorganic/organicsemiconductor devices, and these are applied to the territory of new laser, LED, photovoltaiccell, photodetector and so on. Because of the cheap, easy preparation, non-toxicd ZnOsemiconductor material with high carrier transmission efficiency, many research groupscombine n-type ZnO semiconductor nanowires with p-type organic semiconductor material tomanufacture new devices.In order to improve the current-illumination characteristic of n-ZnO/p-organicsemiconductor heterojunction devices and find the bast method, microcosmic pattern, kinds oforganic semiconductor material, film thickness of n-ZnO/p-organic semiconductor devicescan be changed. But the researches of manufacturing organic semiconductor devices are atinitial stage, the technology can’t be extensively used. Although many research groups haddone the work in the world currently, devices’ knowledge of manufacture technology andcurrent-illumination characteristic are indistinct. In order to solve these problems, researchs ofmanufactures and characteristics of ZnO/PFO and ZnO/NPB inorganic/organicnano-semiconductor heterojunction devices have been done, which use n-type ZnOsemiconductor nanowires and two p-type organic semiconductor materials of PFO and NPB.During this research, we used the base material of orientation ZnO semiconductor nanowiresgrown by Zn. The top of ZnO nanowires are coverd with organic semiconductor film. Al usedas negative electrode is plated on the top of inorganic/organic semiconductor devices,replacing ITO glass. This preparation method is more simplify than before. We find that, thedetection range of nano-semiconductor heterojunction devices of ZnO/PFO and ZnO/NPBinorganic/organic are at the range of visible light, and the current-illumination characteristicof devices are obvious. The devices have many advantages, including highcurrent-illumination response rate, low threshold voltage, cheap fabricating cost. The resultwill pay an directive role to develop new inorganic/organic photodetectores in the future.Main research contents as followed:(1) N-type ZnO semiconductor nanowire arrays were synthesized on zinc foil byhydrothermal method. The growth pattern, nucleation feature and growth mechanism of ZnOnanowires were researched. We find that, crystal structure and photoelectric characteristic of ZnO nanowires can be affected by the parameters, including the ammonia volume ratio,growth time, reaction pressure and annealing conditions. Based on test datas, this paperdetailedly analysis the theory of hydrothermal method of ZnO nanowires growth.(2) PFO and NPB of organic semiconductor material are plated on the top of n-type ZnO,forming organic semiconductor film. We manufacture two inorganic/organic semiconductornanowires heterojunction devices of N-ZnO/P-PFO and N-ZnO/P-NPB. The effects ofcurrent-illumination characteristic are researched by diffetent microstructures and opticalcharacteristics. The effect results of devices’ n-ZnO/p-organic with different organic materialand film’s thickness.(3)100nm ZnO film is grown on the surface of ITO glass by magnetron sputteringmethod. Then organic semiconductor material is plated on the top of ZnO film, andn-ZnO/p-organic film structure semiconductor heterojunction devices are manufactured. TheIV characteristic and current-illumination characteristic of norganic/organic filmheterojunction devices of effects are researched by ZnO nano-film’s thickness, organicmaterial’s kind and organic film’s thickness. The result is compared with these characteristicsof n-ZnO/p-organic semiconductor nanowires heterojunction devices. The research find that,nanowires heterojunction devices’ current-illumination characteristic is batter than filmheterojunction devices’. Because of higher photovoltaic response rate of nanowiresheterojunction devices, the devices are very suitable for manufacturing photodetector orphotosensor. Furthermore, film heterojunction devices are very suitable for manufacturingrectification devices because of devices’ better rectification characteristic.