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Preparation And Properties Of Chalcogenide Semiconductor Nanomaterials

Posted on:2013-07-02Degree:MasterType:Thesis
Country:ChinaCandidate:L D JiaFull Text:PDF
GTID:2181330431968129Subject:Applied Chemistry
Abstract/Summary:PDF Full Text Request
In recent years, the II-VI chalcogen semiconductors can be widely used in photoelectric devices and other fields. Thus, the synthesis and study of properties for this kind of materials have become a very active research field in the solid state chemistry.Based on the above reasons, a series of new type chalcogenide semiconductors nanomaterials were prepared using solvothermal process and its property were discussed. Through systematically studying, some meaningful results were obtained in this paper:1. Quasi-monodispersed CdxZn1-xS nanocrystals with narrow size distribution (the mean diameter was2.8nm) were prepared using laury-lamine as solvent. It was found that the band gap energies and the fluorescence emission peaks of as-prepared CdxZn1-xS nanocrystals systematically shifted to shorter wavelength with increasing Zn content. In addition, the Cdo.5Zno.5S nanocrystals can exhibit obviously upconversion emission due to two-photon excitation. So, It was deduced that these nanocrystals which with tunable optical performance would have a potential application in biological imaging field.2. SnSe nanosheets and ZnSe hierarchical nanostructure which possessed high crystallinity were prepared using particularity of oil-water interface. The results indicated that the SnSe square nanosheets with lateral dimensions of approximately120nmĂ—120nm. Moreover, as an anode material of lithium ion battery, its initial discharge capacity was up to1009mA h g-1, indicated that the as-prepared SnSe nanosheets will be a potential anode material of lithium ion battery. The3D ZnSe hierarchical nanostructure were adopted spherical flowerlike morphology self-assembled from nanosheets. Moreover, this material exhibited an extremely narrow emission with full width at half maximum (FWHM) of approximately13nm, and showed high colour purity luminescence performance. It was indicated that the3D ZnSe hierarchical nanostructure would be a potential alternative of CdSe nanocrystal emitters.3. The inducing growth mechanism of SnSe nanosheets and ZnSe hierarchical nanostructure were discussed, and then it was found that oil-water interfacial played an important role in the forming process of SnSe nanosheets and ZnSe hierarchical nanostructure.
Keywords/Search Tags:CdxZn1-xS, SnSe, ZnSe, nanomaterials, Solvothermal process
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