| One-dimensional (1-D) nanoscale semiconductor materials, including nanotubes,nanowires, and nanoribbons(or nanobelts), have been investigated intensively due to theirgreat potential fundamental physical properties and applications in various fields. The groupⅡ-Ⅵ semiconductor materials are very important.As an important Ⅱ-Ⅵ group semiconductor, zinc sulfide (ZnS) has attracted a greatdeal of interest during the past decades due to its various unique properties. With a wide bandgap of~3.7eV at300K, ZnS is now used extensively in electroluminescent devices, flatpanel displays, infrared windows, sensors, and lasers. As one of the improtant Zn-based Ⅱ-Ⅵ semiconductors, zinc selenide (ZnSe) has been considered to be a prospective material forlight-emitting devices, solar cells, sensors, and optical materials due to its wide direct bandgap (2.67eV) and large exciton binding energy (21meV).In the paper, we achieved the ZnS, ZnSe semiconductors and ZnS/ZnSe heterogeneousstructure on zinc substrates with the aid of cetyltrimethylammonium bromide (CTAB), bysolvothermal method. We used the sublimed sulfur powder as sulfur source and the seleniumpowder as selenium source respectively. The zinc foil is the source of zinc as well as the carrierof products. We investigated the impact on the morphology of ZnS and ZnSe semiconductorsby changing the kinds of surfactants and solvents. We inspected the reaction process of ZnSand ZnSe semiconductor material by transforming the reaction temperature and reaction time.XRD, EDX, SEM and TEM are needed to characterize the products. Finally, in order todetermine luminescence properties of the ZnS, ZnSe and ZnS/ZnSe heterostructure, theproducts are tesed by the room temperature emission spectra (PL) measurement. |
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