| The atomization CMP experiments are arranged according to the orthogonal table L9(34),and these experiments rapidly, efficiently, and economically reflect the polishing effects of thefactors, such as the rotating speed, atomization slurry dosage, pressure, and polishing time.The surface of the wafer was scanned with AFM. According to the range analysis, thepolishing time is the main factor. According to the direct analysis, the best results of surfaceroughness Ra is4.8nm,4.2nm,4.5nm, respectively. We found no scratches or damageswhen observing these three wafers, which were magnified10,000times, via SEM. Particles inthe atomization slurries disperse very well, and their sizes vary, showed by TEM. This paperanalyzes the atomization chemical mechanical polishing materials’ removal mechanism,according to the characterization of the atomization slurry, which possesses a high specificsurface area, the traits of the atomization slurry that are attached to the polishing pad, theimpacts that ultrasonic vibration has on the slurries, the wafers’surface characterizations, etc.,as well as the current research results of the CMP material removal mechanism, concludingthat the material removal mechanism of atomization CMP is the molecular oxidation wearremoval of surface materials.Taking the particles as the research objects, the experiments on atomization CMP onmonocrystalline silicon, which is type100, were carried out. This paper discusses therelationships between the wafer’s surface roughness Ra and the particles’ sizes, and thematerial removal rate and the particles’ sizes. This paper also analyzes the mechanism of theeffects of the particles on the polishing material removal rate, specifically explaining thematerial removal mechanism of the atomization slurry from the aspects of chemical kineticsand molecular dynamics, and depicting the procedure of drawing the chemical kinetics andmolecular dynamics: The atomization slurries attach at the pad surface, and they aretransmitted to the wafer’s surface with the help of the rotation of the polishing pad. Due to theimpacts of the peaks and the micro polarity,15nm SiO2are highly motile, and they transmitlarge amounts of OH-to the wafer’s surface, causing them to join the chemical reaction. Si-Sibonds are attacked, and their fracture critical value decreases apparently. H2O and O2dissolved in the slurry can break the weakenedSi+-Si++ssbonds, so as to trigger theoccurrence ofSi-S i+H2O Si-H HO-Sior Si-S i+O Si-O-Si, finally forming the single polysilicide, the dimerization silicide, etc., which are removed at last. Pressure, rotating speed, and pH are tested as single factors to research their impacts onmaterial removal rate and surface roughness during atomization CMP. Material removal rateof wafer increases when the pressures rise, but pressure has no obvious impact on wafer`ssurface roughness. Material removal rate increases first and decreases lately when the rotatingspeed keep rising, and the surface roughness stays almost unchanged. The wafer`s materialremoval rate first increases then decreases when the pH incre``ases. The mechanism ofparameters`impacts on polishing behaviors are analyzed.Impacts of pad`s texture on polishing behaviors are researched. Different texture of padsachieve material removal rate differently. This paper analyzes the relationship betweenpads`texture and the reduction of the material removal rate: The decreases of the elasticitymodulus weaken the pad’s bearing capacity, rendering the larger deformation of the polishingpad during the polishing process, which is bad for the removal of the material. Reduction ofthe peaks and the surface roughness leads to the reduction of the friction between thepolishing pad and wafer, which reduces the mechanical action. The ultrapure water andatomization slurries that the pores can reserve are reduced, which is bad for the chemicalreaction. |
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