Research Of Preparing Transparent And Electric Film Based On CVD-grown Graphene

ABSTRACT:Graphene is a new carbon nano thin film material, the structure of the hexagonal honeycomb structure of the two-dimensional lattice, each grid point are sp2hybridized carbon atoms, the thickness and one graphene carbon atoms is a truely two-dimensional sense carbon material is. In2004, British scientist Geim and Novoselov firstly isolated graphene from graphite in the laboratory, and that sparked widespread concept note nanomaterials industry and research. Electron transport characteristics are the most important properties of graphene, this unique electrical properties of graphene have indicated that a wide range of potential applications in various areas, such as high-speed transistors, transparent electrode, photoelectric pressure sensors. However, due to the existing mechanical exfoliation of graphene area is too small, the preparation process is limited and can not be industrialized. Therefore, the preparation of large area, high-quality graphene has become the hot topic in academia, chemical vapor deposition (CVD) is the most likely to be the industrialization of the method, which is grown with gaseous carbon sources on copper and nickel substrates in graphene and graphene copper-based CVD growth of a single layer film having excellent properties and continuity.This paper discusses the CVD method for preparing copper-based laboratory large area, high-quality graphene experimental process transparent conductive film, the physical characterization, transfer and repair process graphene films. In the experiment, we studied the growth conditions (growth temperature, gas composition, growth time, treated copper foil) to the copper-based CVD growth of graphene, and by optical microscopy, scanning electron microscopy to characterize the different growth conditions graphene surface and D peak Raman spectra, G peak,2D peak (D peak to determine the defect graphene film, I2D、IG to determine the ratio of graphene layers) to characterize the quality and number of layers of graphene and growth conditions were obtained with the corresponding results in the data analysis. Characterized by a summary of the law, access to the best copper-based laboratory CVD growth conditions. In subsequent work, we use PMMA transfer method, after many experiments a more complete graphene film on a target substrate, an optical microscope and scanning electron microscope observations the film exists damaged on the substrate. To repair damage, we used the second transfer method (transfer the second graphene film on the original damage graphene layer) to repaired the graphene films damage and pulling Raman spectroscopy to verify the impact of secondary transfer method for graphene D peak, G peak,2D peak. It can be said copper-based CVD graphene will make deeply influence on the bound of replacing ITO, optoelectronic displays, optoelectronic devices.