Numerical Simulation On The Process Parameters Effect On The Czochralski Process Of Single Crystal Silicon

Silicon-single-crystal is one kind of foundmental and important material of informatics, electrics, photovaltaic industries, and Czochralski method is one of the most vital methods of manufacturing silicon-single-crystal products. At present, simulation for silicon-single-crystal growth by computer becomes an important reserch-mean to controll silicon-single-crystal’s quality and make up its growth processing.The mathematics model of silicon-single-crystal growth was founded by finite element method. For pulling speed, argon flow rate and pulling height to the growth of silicon-single-crystal, the solid-liquid surface, melt thermal field, flow field and micro-defect’s producting rate of Φ200mm silicon-single-crystal during the process of pulling were researched under different pulling speeds, argon flow rates and pulling heights. At the same time, the mode of effects of Φ400mm silicon-single-crystal during the process of pulling to hollow-cavity was analyzed, which provided guides to processing-optimization and defects-control in the process of producing practically.The results show that the solid-liquid surface form changes from concave to flat first and then to convax with the pulling-speed increasing in the process of crystal-pulling. Both the melt thermal-field and flow-field change slightly and only met-radical-surface and temperature of melt/crucible surface decrease slightly which can help reduce inner-defects. The largest thermal-stress and the V/G value of crystal get improved. The dislocation generation probability increases, however, oxidation rust stacking fault ring generation probability decreases.The hole density and its average size of crystal core-part increase correspondingly. And both the hole density and average diameter moves towards to crystal edges with no-hole area measure decreasing, and the hole generation probability increases. The changing of pulling-speed makes no effects on hole-distribution-rules.The temperature of argon gas and radiation efficiency of inner-furnace increase with argon gas flow rate faster. The middle clockwise votex becomes larger. The thermal field changes slightly with the V/G value of crystal decreasing a little and oxidation rust stacking fault ring generation probability increases.With the height of crystal-pulling, the solid-liquid surface form changes from concave to flat first and then to convax and the convax degree decreased lightly in the shoulder stage. The uniformity of melt thermal field gets improved and the votex in the melt flow field decreases slightly. And the thermal-stress of crystal changes no slightly. The dislocation generation probability decreases.Under the premise of ensuring pulling-process steadily, the choice of crystal pulling speed, the decreasing of argon gas flow rate and increasing of crystal pulling height can improve the straight pulling effiency of silicon single crystal, decrease defects generation probability and improve products’ quality.