| Low semiconductor materials have received extensive attention from the scientific community and industry just because of their excellent electrical and chemical properties, unique microstructure and bright application prospect in the field of optoelectronic devices, meters, etc. This thesis mainly focuses on one-and two-dimensional nano-semiconductor materials.As for one-dimensional nano-semiconductor materials, this thesis describes the synthesis process of ZnO and SnO2nanowires by using chemical vapor deposition method, and then we use some subsequent characterization to determine the type of ZnO and SnO2as the six-party wurtzite structure and rutile type structure respectively, which also illustrates the CVD method is simple, environment friendly and efficient.As for two-dimensional nano-semiconductor materials, this thesis describes the synthesis process of single-, double-and multi-layer graphene by using CVD respectively. Then we use different characterization methods to analysis some relevant graphene materials, and do some mechanical property tests of suspended monolayer graphene with indentation. We find the reported data of graphene, such as the elastic modulus, the hardness, are smaller than the theoretical data. We also research the behavior of metal atoms on suspended graphene in the transmission electric microscope, and find the reason for the motion of Pt clusters on graphene is the electron beam radiation instead of the temperature change. The thesis also considers the application of graphene, and tries to research the chemical modified graphene, lithium ion battery based on multilayer graphene and nano-devices design. We even design the photoelectric detector based on suspended monolayer graphene film, and use the theory of plates and shells to analysis the feasibility of the photoelectric detector and design the topology structure of the main circuit. |