35 Micron Copper Foil Carrier Support Can Peel The Study Of Ultra-thin Copper Foil

With the electronic products developing toward light, thin, short, small, multi-functional and high value-added, the thickness of copper foil becomes more and more thin, and ultra-thin copper foil will be the future direction of electrolytic copper foil. According to the advanced technology of the ultra-thin copper foil is monopolized by foreign copper foil companies and the levels of domestic copper foil production technology and equipment are imperfect, this dissertation studies on the preparation technology of ultra-thin copper foil with carrier foil. The technological process of the organic layer and alloy layer used as a peeling layer, on which ultra-thin copper is electrodeposited, is proposed. A new ultra-thin copper foil production technology with independent intellectual property rights is formed.The ultra-thin copper foil, which had the best surface morphology, were studied on current density, electrodeposition time, additive content and stirring method by SEM. The influence factor on the peeling properties of ultra-thin copper foil was investigated, including different organic layer, different alloy and alloy composition, current density, the electrodeposition time and the solution temperature. The modification effect on the peeling strength of ultra-thin copper foil was researched, which was carried out with different rare earth and its content in the alloy solution. Electrochemical properties of rare earth alloy layer were analyzed by electrochemical workstation in this dissertation.The results indicate that①The optimal conditions for the formation of ultra-thin copper foil layer under 5μm are electrodeposited on the glossy side of carrier foil, 15 A·dm^-2 current density, 6s electrodeposition time, 45～50℃solution temperature, ultrasonic stirred method, 0.03 ml·L^-1 primary brightener and 0.06 ml·L^-1 secondary brightener.②The organic layer is benzotriazole (BTA), the proper concentration is 5 g·L^-1, the best impregnating time is 30 s and the optimum alloy layer is H-G alloy. The optimum technological conditions of the H-G alloy layer are as follows: the current density is 15 A·dm^-2, the solution temperature is 45～50℃, the plating time is 6s, and the pH is 5.5～6.0. Under these optimum conditions, ultra-thin copper foil can be stripped from the carrier.③The peeling strength of the ultra-thin copper foil with carrier foil can be improved, and copper grains were refined by rare earth elements in alloy solution. The optimum addition amount of La, Sm and Y are all 0.1 g·L^-1, Ce is 0.2 g·L^-1, the peeling strength is 0.15～0.20 kgf·cm-1 with the rare earth added to the H-G solution.④Electrochemical test results show that the additive of rare earth can remarkably decrease the polarizability of the alloy plating bath, accelerate the speed of electrode reaction, enhance the reduction ability of the H-G alloy, promote the co-deposition of H-G alloy, increase the metal deposition content on the organic layer, and improve the peeling strength of the ultra-thin copper foil with carrier foil.