The Fabrication Of ZnO Nanowire Arrays Via Water Bath Method Assisted Magnetic Field Induced

ZnO is one kind of II-VI group semiconductor compound with a wide band gap. ZnO is one of the most promising semiconductor materials because it has a variety of morphologies and excellent properties of photo, electric and magnetic. The improved crystal growth process and the reduced crystallization time may be influenced by applying an appropriate magnetic field and thus the quality and production efficiency of the products are increased. Based on this background, this paper researched that the ZnO nanowire arrays of regulation morphology were prepared by using water bath method with magnetic field and the photo property of that was studied. This paper mainly includes the following four aspects.First, it was researched that the growth of ZnO nanowire arrays is influenced by the magnetic field through the design of single factor experiments. Experimental results show that the magnetic field has little influence on the crystal structure of ZnO nanowire arrays but has obvious influence on diameter, uniformity, the percentage ratio of zinc and oxide and luminescence property. Combining experimental results and related information, the influence mechanism of the magnetic field was analyzed.Second, the orthogonal experiment was designed and the preparation process was optimized. Experimental results show that orientation of ZnO nanowire arrays is greater influenced by the magnetic field, the diameter of ZnO nanowire arrays is greater influenced by the concentration of solution, the length and the length to diameter ratio of ZnO nanowire arrays is greater influenced by the reaction temperature. According to the experimental results, the growth mechanism of ZnO nanowire arrays is explained. Then the luminescence mechanism of the samples is explained by testing the PL property.Third, the ZnO nanowire arrays were further studied the effect on the morphology and optical properties by doping Nd element. The structure, morphology and preferential growth direction of Nd-ZnO nanowire arrays are unchanged, but the UV emission performance of that is improved in a large extent.