The Preparation Of In_xGa_1-xN By Sol-Gel And The Research Of P-Type Doping

Indium gallium nitride (InxGa1-xN) is one of the newest semiconductor materials all over the world. The research of InxGa1-N has become the hotspot and frontier in the field of optoelectronics and microelectronics because of it possess a continuous tunable energy gap that cover the whole solar spectrum. Meanwhile, with direct energy gap, high electron mobility, stable chemical and mechanical properties and the strong ability to resist radiation makes the InxGa1-xN material glow powerful vitality.Under the basis of previous research, the InxGa1-xN ternary alloy are prepared with two step methods including the Sol-Gel method and high temperature ammoniation method, which is very simply and low-lost in this paper. The sol precursor was synthesized by GaCl3 as Gallium source, InCl3 as Indium source, crtric acid as complexing agent, and the ternary alloy are prepared by changing the ammoniated temperature, holding time and the percentage of indium. Then the samples were analyzed by structure, morphology and elemental content. The results indicate that the samples have a better performance under the condition of the ammoniated temperature is 670 ℃and the ammoniated time is 8h. The photoluminescence indicate that there is a blue emission band in 420-440nm. Hall test also indicate the annealing can reduce the lattice defects and improve the crystal quality.This paper also discuss the lightly p-type doped of 1%,3%,5% Mg element in InxGa1-xN ternary alloy films. Mg element successfully doped can be prove by the analysis of microstructure and element content. Hall test indicate that the samples exhibit p-type and have a high value of hole concentration and smaller resistivity after second annealing.