Study On The Preparation And Characterization Of Ni-N Thin Films

The resistive switching behavior has been observed in a number of transition metal oxides (TM-oxides), such as NiO, Tio2, Hfo2, ZnO and CuxO and solid electrolytes, such as GeSe, silicon, and some of organics. In fact, some nitrides such as copper nitride, aluminum nitride, silicon nitride have similar electrical properties to TM-oxides, which is considered as new resistive material. We creatively present another type of nitride:nickel nitride prepared by plasma-immersion ion implantation (PⅢ) as well as electron cyclotron resonance plasma assisted pulsed laser deposition (ECR-PLD), the relationship between structure and function is discussed based on our results, and with band structure calculation, we discussed whether NI3N could be a new resistive material.In this paper, PⅢ was used for the application of Ni-N fabrication. The Ni thin film was prepared by pulsed laser deposition (PLD). The samples were nitrogen doped by PⅢ. Ni-N thin films with different component were prepared by controlling the voltage and time of ion implanted in PⅢ. The effects of the voltage and time of ion implanted in PⅢ and annealing temperature on structure, surface morphology, electrical properties of the films were studied systematically. The structure and surface morphology were characterized by XRD and AFM, the electrical properties were studied by Hall system.iN this study, we attempted to use PLD to prepare different Ni-N thin films by passing N2 of different pressure into PLD chamber respectively. The results of the electrical measurements show that the Ni-N thin films were not prepared in our work.We also successfully prepared nickel nitride films by ECR-PLD and the samples were followed with a thermal annealing process at different temperature. Based on the result of testing and analysis, the resistivity of these nickel nitride films is in the range of 10-7-10-Ω·m.In addition, the band structure of M3N was studied by band structure calculation. Based on experiments and theoretical calculations, we concluded that the M3N thin film has no resistive properties.