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Fabrication And Performances Of Integrated(B/Ti)n/TaN Reactive Multilayer Ignition Bridge

Posted on:2015-11-02Degree:MasterType:Thesis
Country:ChinaCandidate:X Y CaiFull Text:PDF
GTID:2191330473955509Subject:Materials Science and Engineering
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Film ignition bridges is an important components of electro-explosive devices(EED), which can be wildly used in military, aerospace and aviation et al fields. In this thesis, B/Ti reactive multilayers were deposited on the Ta N thin-film igniter bridges to combine electric energy and chemical energy with the aim to improve the safety, reliability and energy conversion efficiency of the ignition bridges. The main works are as following:Firstly, 2μm thick Ta N thin-films was prepared by DC reactive magnetron sputtering, Ta N thin-films ignition bridges were prepared by lithography-wet etch process. The influences of corrosion parameters on the corrosion rate and effect of Ta N thin films were investigated. The optimal corrosion parameters are 30℃ of the solution temperature, 0.5 of the HNO3/HF solution volume ratio, no deionized water is added. Under the optimal corrosion parameters, the etch rate and the lateral erosion of the Ta N thin-film are about 6μm/min and about 5μm, respectively. The boundary of Ta N thin-film ignition bridges is soomth, and the resistance of the ignition bridge is about 1Ω~3Ω. The results of the samples tested by constant current show that the input ignition energy is about 10 m J~50m J, the ignition delay time is less than 3ms. The results of the samples tested by capacitor discharge show that the input ignition energy is about 1m J~30m J, the ignition delay time is about 100μs, the electrical-explosion temperature is about 2000K~4000K.Secondly, the B and Ti thin-films were prepared by RF and DC magnetron sputtering, respectively. The influences of sputtering parameters on the performances of the B and Ti thin-films were investigated. The optimal sputtering parameters of the B thin-films are 0.6Pa of the sputtering pressure, 200 w of the sputtering power, 100℃ of the substrate temperature. The B thin-film depositing rate is about 8nm/min under the optimal sputtering parameters. The optimal sputtering parameters of Ti thin-films are 0.6Pa of the sputtering pressure, 160 w of the sputtering power, 100℃ of the substrate temperature. The Ti thin-film depositing rate is about 13.5nm/min under the optimal sputtering parameters. The B/Ti reactive multilayer ignition bridges were patterned by mask. The first layer is Ti film with the thickness about 500 nm, then deposited B film and Ti film layer by layer with the thickness about 200 nm. B/Ti reactive multilayerignition bridges contains 39 layers and its total thickness is about 8μm. The layers structure is clear and the surface is smooth. The resistance is about 10Ω~30Ω. The results of the samples tested by constant current show that the input ignition energy is about 173 m J~457m J, the ignition delay time is about 0.6ms. The results of the samples tested by capacitor discharge show that the input ignition energy is about 30 m J~65m J, the ignition delay time is about 150μs and the electrical-explosion temperature is about 2000K~5500K. The sparkle of the B/Ti reactive multilayer ignition bridges is stronger than that of Ta N thin-film ignition bridges.The B/Ti reactive multilayer were prepared on Ta N thin-film ignition bridges by mask. The first layer was B film with the thickness about 400 nm, then deposited Ti film and B film layer by layer with the thickness about 200 nm.(B/Ti)n/Ta N ignition bridges contains 39 layers and its total thickness is about 8μm. The resistance is about 2Ω. The results of the samples tested by constant current show that the input ignition energy is about 10 m J~90m J, the ignition delay time is less than 2ms. The ignition effect is similar to the B/Ti reactive multilayer ignition bridges.(B/Ti)n/Ta N ignition bridges can be ignited by smaller input energy and bring greater output energy. The results of the samples tested by capacitor discharge show that the input ignition energy is about 0.3m J~10m J, the ignition delay time is about 20μs, the electrical-explosion temperature is about 3000K~9000K. The sparkle height and duration-time are similar to that of B/Ti reactive multilayer ignition bridges.(B/Ti)n/Ta N ignition bridges can effective decrease the ignition delay time and the input ignition energy, improve the electrical-explosion temperature and energy conversion efficiency.
Keywords/Search Tags:electro-explosive device(EED), TaN thin-films, DC&RF magnetron sputtering, wet etch, B/Ti reactive multilayers
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