Preparation And Properties Of The Silicon Carbide Nanowires And Carbon Nanotubes Composite Films

Si C is a wide-bandgap semiconductor and has various excellent properties such as high carrier concentration, high thermal conductivity, high tolerance for electrical breakdown, high hardness, and high mechanical strength. These excellent properties make Si C a good candidate for electronic and photonic devices designed for high-temperature, high-power, and high-frequency applications. The same as a one-dimensional material of carbon nanotube(CNT), because of its unique optical and electrical properties, makes it have a huge potential application in the field of photoelectric. No matter growth mechanism or performance, the two have similarities. These similarities provides the foundation and possibility for their composite, and also have important significance in the field of photovoltaic application.Based on the graphite and nickel as target material, silicon as the substrate, using the high vacuum ball flat magnetron sputtering coating equipment to prepare the metal and carbon composite membrane. After the heat treatment, it becomes silicon carbide nanowires/carbon nanotube composite film. The morphology, structure, composition and oxygen content of the products were analyzed and studied in details by a variety of tests and characterization methods, such as field emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), Raman spectrometer(Raman), X-ray photoelectron diffraction(XPS), X-ray diffraction(XRD) and so on. The influence of different variables, which include the thickness of the catalyst, temperature, holding time, and cooling rate, on the growth process and morphology of Si C nanowires were researched. And the performances of the composite film in wettability, photoluminescence property, and hall effect were discussed.Through a variety of tests and characterization methods, we found these: film was consists of multiwalled carbon nanotubes and Si C nanowires, the CNT was parallel to the basement and the Si C nanowires had an angle with the basement. On the surface of the Si C nanowires, there was a layer of amorphous Si O2 layer. The catalytic metal thickness, annealing temperature, holding time and cooling rate had impacts on the growth of the composite films. When the film had a thinner catalyst layer, the higher annealing temperature and the faster cooling rate were good for the growth, made the distribution of nanowires and nanotubes more intensive and the crystallinity of tubes is better. Extended holding time while encourages the growth of carbon nanotubes and nanowires, but increased the disorder of tubes.With the changes of the surface morphology, the contact angle dropped from 133.7 °to 0 °. The maximum emission wavelength of film at around 380 nm, relative to the cubic silicon carbide of 518 nm, it had a blue shift. With the increase of the thickness of the catalyst, the carrier concentration was elevated, however the hall coefficient was gradually declining.