Sol - Gel Technology To Prepare Less Reflective Film

In this paper, SiO₂, SiO₂-TiO₂, SiO₂-ZrO₂ and SiO₂-B₂O₂ antireflection coating were prepared via sol-gel processing, by dip-coating on glass substrate. The transmittance of the glasses with the antireflection coating was measured by UV/VIS spectrophotometer. The composition and catalysis condition of the sols and dip-coating process have been found to have significant influence on the transmittance of the glasses with the antireflection coating. The transmittance of the glasses with the antireflection coating that was prepared under ammonia catalysis was higher than that under hydrochloric acid catalysis. The transmittance of the glass with the antireflection coating was found to be higher than 95%.The antireflection coating on the silicon wafer substrate has been prepared by sol-gel process and the reflectivity of the silicon wafer with antireflection coating was measured by UV-VIS-NIR spectrophotometer. The composition and catalysis condition of the sols and dip-coating process have been found to have significant influence on the reflectivity of the silicon wafer with antireflection coating. The reflectivity of the silicon wafer with antireflection coating that was prepared under hydrochloric acid catalysis was much lower than that under ammonia catalysis. The reflectivity of the silicon wafer with antireflection coating has been found to be lower than 10%.The photovoltaic properties of silicon solar cells with antireflection coating prepared by sol-gel process were investigated. The improvement obtained in the silicon solar cell efficiency has been found to be about 20% when antireflection coatings were prepared on silicon solar cells under hydrochloric acid catalysis. The improvement obtained in the silicon solar cell efficiency was about 15% when antireflection coatings were prepared on silicon solar cells under ammonia catalysis.