<sub> Of Tio 2 </ Sub> Thin Films Preparation And Uv Conductance Properties Of A Preliminary Study

TiO2 thin films were deposited by DC reactive magnetron sputtering method on glass and quartz substrates coated with tin-doped indium oxide (ITO) thin films respectively. X-ray diffraction (XRD), Raman spectrum, atomic force microscope (AFM), scan electron microscope (SEM), ultraviolet absorption spectrum were used to characterize the sample's structure, morphology, ultraviolet absorption ratio and so on. The influences of Preparing condition, such as substrate temperature, sputtering pressure, O2/Ar ratio, anneal temperature ect, on the structure and other properties of TiO2 thin films were studied, the primary investigation of TiO2 thin films' photoresponse was performed, it is possible for TiO2 thin films to be a new UV detector material. A structure of C/ TiO2/ITO and ITO/TiO2/ITO were used to test the photoconductivity of TiO2 thin film using a black light lamp as light source. The results of this experimental research show that relative low sputtering pressure, appropriate O2/Ar ratio and relative high anneal temperature benefit to the crystallization of the TiO2 thin films. The crystallization, circuit structure, the bias voltage, and anneal temperature effect the photoresponse. The rising relaxation time and falling relaxation time of photoresponse were about 2s and 50s respectively, when the bias voltage is 2.0V, the stable photocurrent can be 2.1 raA, which indicate that it is possible for TiO2 thin films to be a new UV detector material. What's more, ZnO thin films were preparated and its photoresponse were also tested compared with TiO2 thin films' photoresponse, the experiment result indicate the feasibility of TiO2 thin films detector.