Preparation Of Titanium Nitride Thin Films By Magnetron Supttering And Investigation On The Structure And Conductivity Of The Films

Titanium nitride (TiN) is a transition metal nitride which has a structure combined with covalent bond, ionic bond and metal bond. It has the advantages of high intension and hardness, high temperature-resisting, acid-proof alkaline, wear-resisting, favorable electrical conductivity, thermal conductivity and excellent optical properties. It is widely used in preparation cermet, cutting tool, mould, crucible of metal melting, lining material of electrolysis of fused salts electrode, electrical contact, coating material of metal surface and selective transmission of solar energy.In this work, TiN thin films were prepared by DC magnetron reactive sputtering on p-type Si (111) substrates. Investigate the influence of craft parameters to the structure and electrical capability of TiN thin films by adopting single parameter change method. Investigate the influence degree of each parameter on the conductivity property by the orthogonal design experiments. The influence of sputtering current, flow ratio of Ar/N₂ and substrate temperature on the structure, crystal orientation, surface morphologies and electrical properties of TiN thin films and Ti/TiN thin films were investigated. The influence rules of craft parameters change to the thin films capability were analyzed and summarized, in order to supply beneficial reference for better properties of TiN thin films.The thesis shows that, to TiN monolayer thin films, the first batch of samples was prepared under different sputtering current. The main component of the TiN thin films is cubic phase TiN. With the increase of sputtering current, there is a transition of the preferred orientation from (111) to (200), the thickness and rms roughness of the TiN thin films increase, the resistivity of TiN thin films has a minimal value. The second batch of samples was prepared under different Ar and N₂ flow ratio. The main component of the thin films is cubic TiN with (200) preferred orientation. When the Ar and N₂ flow ratio increases, the thickness of the thin films increase gradually, while the surface roughness and the resistivity decrease firstly then increase. The surface roughness and the resistivity reach a minimum value when the Ar and N₂ flow ratio is 15:1. The third batch of samples was prepared under different substrate temperature. The main component of the thin films is cubic TiN with (111) preferred orientation when the substrate temperature is below 240°C, there is a transition of the preferred orientation from (111) to (200) when the substrate temperature increase. While the substrate temperature increase, the resistivity of TiN thin films increase gradually.To Ti/TiN double layer thin films, the first batch of samples was prepared under different sputtering current. The thin films are composed of hexagonal close packed Ti, tetragonal Ti₂N and face-centered cube TiN. With the increase of sputtering current, the resistivity of the thin films decreases obviously. The second batch of samples was prepared under different Ar and N₂ flow ratio. The thin films are composed of hexagonal close packed Ti and face-centered cube TiN. When the Ar and N₂ flow ratio increases, the electrical capability of the thin films get better. The grain diameter mean and surface roughness of Ti/TiN double layer thin films are less than those of TiN monolayer thin films, however, their resistivity are more higher than that of TiN monolayer thin films.The thesis supply theoretic reference for better research into the microstructure and surface morphologies of TiN thin films and improve their capabilities. It also supply disciplinarian reference and experiment reference for preparation better properties of TiN thin films and other correlative nano-thin films.