Study On Properties Of Luminescent AlN Thin Film By Filter Arc Ion Plating

Aluminium nitride thin film has a series of excellent physical and chemical properties,with a wide-bandgap of 6.2eV,AlN is a direct and widest-bandgapШ-V semiconductor material, the bandgap transition can give a deep ultraviolet light, it shows a promising and potential semiconductor luminescent material.Now many technologies have been used for preparation of luminescent AlN thin films such as magnetron sputtering, Metal-organic Chemieal Vapor Deposition, molecular beam epitaxy and so on.The arc ion planting as a high ionization, high deposition rate vacuum coating technology has little usage in the preparation of luminescent materials because of the macroparticles pollution in the films.The AlN,AlN:Cr,AlN:Cu thin film were deposited by sheild plate or magnetic filter arc ion planting so as to eliminate the macroparticles pollution,and also studied the properties of photoluminescence of these films.The non-doped AlN thin film was prepared by shield plate arc ion plating, under the function of some non-intrinsic oxygen impurity, it has a broad band photoluminescence spectrum with its wave crest at about 400nm.This film has an unconspicuous (100) preferential orientation, the surface roughness value Rms is 22.150 nm and Ra is 16.281nm, with the accretion of target- substrate distance, the configuration of AlN thin film got a transition from crystal to noncrystal.No heat was used on the substrate in the preparation of Cr-doped AlN thin film by magnetic filter arc ion planting(MFAIP),this film is noncrystal and the Cr element has an existance of trivalence ion and its atom percent is 5.4%,just because of the existence of Cr3+,the red photoluminescence is observed. The carrier chroma of MFAIP AlN:Cr thin film is -1.99×1017cm-3,and its hall conficient and hall mobile are 31.29cm3/ C and 35.34cm2/ (V·s).The noncrystal Cu-doped AlN thin film was prepared by shield plate arc ion plating, pollution of C,O elements exist in the surface of this film as the film exposed to the air after deposition.After the denudation to the inside of this film,the oxygen is 4.1% and formed an Al-rich AlN thin film,the atom percent of Cu is 11% and has an existance of univalent ion ,owing to that reason,the central photoluminescence spetrum is 450nm.The carrier chroma of shield plate arc ion plating AlN:Cu thin film is 1.9×1018 cm-3, and its hall conficient and hall mobile are 3.2666cm3/ C and 0.2547cm2/ (V·s).Also the noncrystal Cu-doped AlN thin film was prepared by magnetic filter arc ion planting,and find that the P-type(111) silicon and glass substrate have more luminescent intensity and the increase of bias voltage boosts the photoluminescence intensity of AlN:Cu thin film.To study the phospor-free luminescent material, the AlN: Cr, Cu double-layer thin film was deposited by magnetic filter arc ion planting and its luminescent spectrum consists of blue-violet and red emission.