Composite Materials And Their Optical And Electrical Properties Of Pulsed Laser Preparation Of Silicon-based Study

Silicon is the basic material in micro-electronic area. However, bulk silicon is a rather inefficient light emitter due to its indirect band gap electronic structure, which limits the application of silicon in photo electronic integration. Fortunately, nano scale silicon was found be able to emit light under the excitation of the light of certain wavelength. This makes the realization of photo electronic integration possible. Vertical pulse laser is used to prepare silicon nanoparticles and deposit nanosilicon film on glass directly. Laser-induced forward transfer method is adopted to prepare nanosilicon film on silicon at amibient temperature and atmospheric pressure. To improve the photoluminescence stability of silicon nanoparticles, BPO and VAc are used to graft the silicon particles. The FTIR and XPS spectra prove that the benzene ring and PVAc molecule are grafted onto silicon particles successfully. On the other hand, silicon nanoparticles are water-heated, and the PL intensity is enhanced obviously. SEM images show the nanosilicon film on glass deposited in Ar is composed of mutually agglomerated particles, the nanosilicon film on silicon substrate deposited in air is composed of chain like hyper branched Si nanowires, which is consisted of Si nanocrystallites embedded within and interconnected by amorphous silicon oxide. Three peaks appear in PL spectrum of SiNWs at 410nm,470nm,760nm respectively. The peak at 410nm is thought to origin from radiative recombination of excitons at the interface between silicon crystal and amorphous silicon oxide.