Uv Lithography Preparation Of Patterned Low-dimensional Nanostructures Display

In this passage,the steady photoetching technology of BP-212 positive photoresist is researched. BP-212 positive photoresist is used in patterning glass and anodic aluminum oxide (AAO) templates. The best photoetching technology conditions are fllowing: the spin photoresist volume is 0.2ml; the low rolling speed is 600r/min and spinning 5second; the high rolling speed is 2500r/min and spinning 30second; the time of preceding drying is 15 minute; the time of exposure is 50 second; the time of after drying is 15 minuteUltraviolet radiation (UV) photolithographic methods are utilized to form set patterns onto porous anodic aluminum oxide (AAO) templates. Then, polystyrene one-dimensional nanostructures are prepared by depositing a solution of polymer into this modified template. BP-212 positive photoresist is used in patterning AAO templates. Samples are dissolved 1 or 2 hours by mixture of phosphoric acid and chromic acid or NaOH solvent. Then, patterned polystyrene nanowire arrays are produced. The products were characterized by scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS). The results of SEM illuminated that the pattern contains many identical circular structures, the diameter of each rotundity is about 5μm. And the space between each circularity is also 5μm. And the patterned polystyrene nanowire arrays completely copied the pattern on the mask.Cu nanowires are successfully prepared via electrochemical decomposition in the AAO membrane of a 200nm in aperture diameter. Besides ,patterned Cu nanowires are fabricated by pholithography. By this method the depositing time can be controlled to get Cu nanowires with various length/ diameter ratio ,and the patterned nanowire arrays are highly arranged. The appearance is just the same with the photomask.